Semiconductor crystal growth is a critical process in the production of high-quality materials like silicon, gallium arsenide, and other compounds used in electronic devices.
Techniques such as Czochralski (CZ) growth and Bridgman-Stockbarger methods involve melting raw materials at extremely high temperatures and carefully controlling the cooling process to form single-crystal ingots with precise electrical properties.
These processes require materials that can withstand extreme thermal and chemical conditions while maintaining structural integrity. Our PC70 Carbon/carbon (C/C) composites, are known for their exceptional thermal stability, high strength, and resistance to thermal shock and are well-suited for use in crystal growth equipment.
For instance, C/C composites can be used to construct crucibles, susceptors, and heat shields in crystal growth furnaces, where they provide uniform heating, minimize contamination, and endure the harsh environments of high-temperature melting and cooling cycles. Their low thermal expansion coefficient ensures dimensional stability, which is crucial for maintaining the precision required in crystal growth.
By incorporating PC70 carbon/carbon composites into semiconductor crystal growth systems, manufacturers can enhance process efficiency, reduce downtime, and produce higher-quality crystals for advanced electronic applications.
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